An interesting AlGaInP multiple-quantum-well light-emitting diode (LED) with a direct ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. The direct ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the …
Фирма МАКС ОПТОТЕК ЕООД (max optotec) с ЕИК/ПИК 175370630 е основана на 2007 с правна форма Еднолично дружество с ограничена отговорност или на кратко ЕООД.
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A non-absorbing window-structure formed by solid phase diffusion has been employed to AlGaInP visible laser diodes with a multi-quantum barrier(MQB) and a strained active layer for the first time. Maximum output power density over 18MW/cm /sup 2/ without optical damage and stable operation under 40-50mW CW conditions are demonstrated.
An omnidirectional reflector (ODR) consisted of (MgF 2)/Ag was employed in AlGaInP-based vertical red light-emitting diodes (LEDs) in order to increase the light extraction hence the wall-plug efficiency.In this structure, the dielectric MgF 2 layer with low refractive index acted as current blocking and reflection enhancing layer. The cylindrical AuZn alloy micro …
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EPILEDS produces a series of high brightness ALGAInP chips with wavelength ranging from 580 to 860nm, applied on various Applications say, landscape lighting, plant lighting, engineering …
Улаанбаатар салбар: Монгол Улс, Улаанбаатар хот, Сонгинохайрхан дүүрэг, 20-р хороо ...
This study fabricated and analyzed AlGaInP-based red microlight-emitting diodes (LEDs) ranging from 2 to 15 m in size. To collect photons from a single micro-LED at this scale, a solar cell...
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Electrical and Optical Characterization of the Fabricated Micro-LEDs. The electrical characteristics of the AlGaInP/GaInP micro-LED without passivation were shown in Fig. 1b depending on the device sizes from 15 × 15 μm 2 to 80 × 80 μm 2.At the reverse bias region, the dark current densities were measured nearby the measurement floor, while it was clearly …
The authors present calculations of quaternary III-V semiconductor alloy optical properties and the comparison of the theoretical data with available experimental results for …
Our proposed method to treat AlGaInP micro-LEDs raises promising opportunities for the future development of high-performance optoelectronics. Abstract: The efficiency of …
Optical constants of GaP-InP (Gallium indium phosphide, GaInP) Schubert et al. 1995: n,k 0.250–0.954 µm
The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO 2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the …
AlGaInP-based red light-emitting diode (LED) arrays are a promising technology. However, due to the difficulty of mesa etching, the small size of red Micro-LEDs is easily affected by edge …
To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated five AlGaInP red micro-LEDs with different pixel sizes (160 × 160, 80 × 80, 40 × 40, …
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AlGaInP Laser Diode Opnext. Inc. HL6714G: 93Kb / 4P: AlGaInP Laser Diode HL6724MG: 92Kb / 4P: AlGaInP Laser Diode Semiconductor: HL6323MG: 36Kb / 8P: AlGaInP Laser Diode o Semicon Device: DL-4038-025: 68Kb / 3P: High Power AlGaInP Laser Diode Semiconductor: HL6320G: 28Kb / 6P: AlGaInP Laser Diodes Opnext. Inc. HL6319G: 94Kb ...
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In this study, we successfully fabricated AlGaInP red micro-LEDs with double dielectric passivation using ALD and PECVD. The deposition of this double-passivated layer of …
N-side up thin-AlGaInP epilayers based on vertical light-emitting diodes (VLEDs) (light emitting area: 44 mil × 44 mil) with Si and composite metal (copper/Invar/copper; CIC) …
The structure of the sapphire AlGaInP chip, as depicted in Fig. 1 b, includes a central LED light source and four surrounding photodetectors, and a sapphire substrate for optical coupling. The elastomer is a hollow structure containing a 0.5 mm radius quartz sphere and surface random microstructures inverted from sandpaper moulds.
